parameter symbol typ unit repetitive peak off-state voltages v d r m v r r m 500 v rms on-state current i t ( r m s ) 12 a non-repetitive peak on-state current i t s m 100 a max. operating junction temperature t j 110 o c storage temperature t s t g -45~150 o c BT151-500 general description parameter symbol test conditions min typ max unit repetitive peak off-state voltages v d r m v r r m 500 v rms on-state current i t ( r m s ) full sine wave; t m b 107 o c 12 a on-state voltage v t i t =23a 1.4 1.75 v holding current i h v d = 12 v; i g t = 0.1 a 7 20 ma gate trigger current i g t v d = 12 v; i t = 0.1 a 2 15 ma latching current i l v d = 12 v; i g t = 0.1 a 10 40 ma gate trigger voltage v g t v d = 12 v; i t = 0.1 a 0.6 1.5 v passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. typical applications include motor control, industrial domestic lighting, heating and staticand switching. to-220 absolute maximum ratings electrical characteristics ( ta = 25 c) o ( ta = 25 c) o tiger electronic co.,ltd
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